Відділ дифракційних досліджень структури напівпровідників - IФН ISP
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Department's activities
  • Coherent interaction of X-ray radiation with real crystals and multilayer epitaxial structures to explain the fundamental physical principles of radiation transformation in the case of dynamical diffraction. Computer simulations of dynamical diffraction processes im multilayer structures.
  • Physics of the defects formation, structural relaxation and phase interaction in semiconductor materials and systems.
  • Physical backgrounds of X-ray diffraction application for determination of the parameters of the real multilayer epitaxial layers.
  • Anomalous X-ray scattering in semiconductor nanostructures near K-absorption edge.
  • Surface, nearsurface layers, interfaces and thin layers. Investigation of their structures and propertires.
  • The development of nondestructive techniques for structural perfection control and elemental analysis for crystalsm epitaxial systems and devices.
 
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